Micron Technology, Inc., was named Best-in-Class Supplier for Memory (DRAM) in Sun Microsystems’ 2007 Supplier Awards program. The Supplier Awards recognize companies that make outstanding contributions to Sun’s record of delivering superior technology, quality service and excellent value to its customers.

Micron Technology, Inc., introduced a new automotive image sensor that enables a more perceptive driving experience by providing an intuitive look at the drive ahead or the view behind.

Intel Corporation and Micron Technology, Inc., today announced they are sampling industry-leading 50 nanometer (nm) multi-level cell (MLC) NAND flash memory manufactured by their NAND flash memory joint venture, IM Flash Technologies .

Micron Technology, Inc., today introduced its new Aspen Memory family of energy-efficient products, featuring the industry's first low-voltage DDR2 DRAM in reduced chip count memory modules.

Micron Technology, Inc., today unveiled a 1/4-inch, 3-megapixel complete camera system-on-chip (SOC) sensor for mobile handsets. Unique to the market, Micron has designed an anti-shake feature into the sensor, which greatly reduces image blurring often found in camera phone pictures due to camera shake

Micron Technology, Inc., today officially opened a new manufacturing facility in Xi'an, China. The facility, Micron's first manufacturing facility in China, is designed for assembly and test operations for Micron's semiconductor products, including dynamic random access memory, NAND flash memory and CMOS image sensors.

The computer chip industry is facing a predicament: as chips get smaller they are reaching a physical limit. Today's semiconductor devices are made of parts containing just a few hundred atoms of silicon and other materials. As consumers demand even faster and smaller devices, nano-scale effects will change the materials' behavior.