A joint team of researchers at CIC nanoGUNE (San Sebastian, Spain) and the Max Planck Institutes of Biochemistry and Plasma Physics (Munich, Germany) report the non-invasive and nanoscale resolved infrared mapping of strain fields in semiconductors.

After announcing last April a method for growing exceptionally long, straight, numerous and well-aligned carbon cylinders only a few atoms thick, a Duke University-led team of chemists has now modified that process to create exclusively semiconducting versions of these single-walled carbon nanotubes.

Researchers at the National Institute of Standards and Technology (NIST) have developed a method to measure the toughness—the resistance to fracture—of the thin insulating films that play a critical role in high-performance integrated circuits.

The fast pace of growing computing power could be sustained for many years to come thanks to new research from the UK's National Physical Laboratory (NPL) that is applying advanced techniques to magnetic semiconductors.

Researchers working at the National Institute of Standards and Technology (NIST) have demonstrated for the first time the existence of a key magnetic—as opposed to electronic—property of specially built semiconductor devices.

University of Wisconsin-Madison engineers and physicists have developed a method of measuring how strain affects thin films of silicon that could lay the foundation for faster flexible electronics.

Oregon researchers have synthesized an elusive metal-hydroxide compound in sufficient and rapidly produced yields, potentially paving the way for improved precursor inks that could boost semiconductor capabilities for large-area applications.

Researchers from the National Institute of Standards and Technology (NIST) and Seoul National University (SNU) have learned how to tweak a new class of polymer-based semiconductors to better control the location and alignment of the components of the blend.

In order to realize the electrical units of voltage, resistance and current with highest accuracy quantum effects in nano-circuits are nowadays used. Important prerequisites are extremely pure semiconductor layers where high-mobile electrons move through the crystal without collision with residual impurities.

Applied scientists at Harvard University in collaboration with researchers from Hamamatsu Photonics in Hamamatsu City, Japan, have demonstrated, for the first time, highly directional semiconductor lasers with a much smaller beam divergence than conventional ones.

A breakthrough discovery at UC San Diego may help aid the semiconductor industry’s quest to squeeze more information on chips to accelerate the performance of electronic devices. So far, the semiconductor industry has been successful in its consistent efforts to reduce feature size on a chip.

The odd behavior of a molecule in an experimental silicon computer chip has led to a discovery that opens the door to quantum computing in semiconductors.